Always Evolving SSD The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. In capacities up to 2TB, with reliability of up to 1,200 TBW. Level up Performance The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWrite boost. More Design Flexibility The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung's innovative technology empowers you with the capacity to do more and accomplish more. Exceptional Endurance The new standard in sustainable performance. Get up to 1,200 TBW with a 5-year limited warranty for lasting performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung’s quality. Unparalleled Reliability Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops. Samsung Magician Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance. Specifications Rated Capacity 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) Form Factor M.2 (2280) Interface PCIe Gen 3.0 x4, NVMe 1.3 Dimension (WxHxD) 80.15 x 22.15 x 2.38 (mm) Weight Max 8.0 g Weight Storage Memory Samsung V-NAND 3-bit MLC Controller Samsung Phoenix Controller Cache Memory Samsung 2GB Low Power DDR4 SDRAM Performance Sequential Read - Up to 3,500 MB/s * Sequential Write - Up to 3,300 MB/s * Random Read (4KB, QD32) - Up to 620,000 IOPS * Random Write (4KB, QD32) - Up to 560,000 IOPS * Random Read (4KB, QD1) - Up to 19,000 IOPS * Random Write (4KB, QD1) - Up to 62,000 IOPS * * Performance may vary based on system hardware & configuration Environment Average Power Consumption (system level) **Average: 6 W*Maximum: 9 W (Burst mode) Power consumption (Idle) Max. 30 mW ** Allowable Voltage 3.3 V ± 5 % Allowable voltage Reliability (MTBF) 1.5 Million Hours Reliability (MTBF) Operating Temperature 0 - 70 ℃ Operating Temperature Shock 1,500 G & 0.5 ms (Half sine) ** Actual power consumption may vary depending on system hardware & configuration Warranty 5-Year Limited Warranty or 1,200 TBW Limited Warranty